The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2003
Filed:
Sep. 14, 1999
John H. Keller, Newburgh, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A well-defined buried layer is developed in a body of semiconductor material such as a wafer at high throughput and without developing non-annullable crystal lattice defects at a surface of the body of semiconductor material using a broad, substantially uniform ion beam, preferably provided by an electron-cyclotron resonance or bucket or multi-pole plasma source, which is allowed to produce ionization only when a stable acceleration voltage is present to provide a narrow spread of ion energies. High purity of ion population in the ion beam is provided by employing a high level of vacuum (e.g. fractions of a microTorr) in the implantation vessel or ion source and introducing ionizable material in substantially pure form. Thus mass analysis of the beam is unnecessary for implantation of only a desired ion species. A magnetic filter may be employed to adjust relative populations of ion species. Arc breakdown can be avoided by increasing the length of the ion beam extraction column so that the. implantation process can be conducted at a high duty cycle or even continuously.