The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2003
Filed:
Jun. 06, 2001
Giuseppe Curello, Catania, IT;
Infineon Technologies, AG, Munich, DE;
Abstract
A notched gate configuration for high performance integrated circuits. The method of producing the notched gate configuration comprises forming a dielectric substrate and depositing a gate oxide layer, a conductive film layer, and a metal silicide layer over the gate oxide layer to form a conductive stack. A patterned silicon nitride mask layer is deposited over the conductive stack and over-etched to form a small notch in the metal silicide layer at each side of the patterned silicon nitride mask layer. This over-etching causes indentions to form in the conductive stack to result in decreased gate overlap between the gate and a source and drain which are later formed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile