The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2003
Filed:
Jan. 19, 2001
Motorola, Inc., Schaumburg, IL (US);
Abstract
The semiconductor device has a trench isolation between a P-well and N-well. This trench isolation region is formed of oxide which during the course of the formation of the P and N well is doped with P-type and N-type dopants. Thus the trench has a P-type doped region and an N-type doped region which are typically phosphorous and boron. After the P and N well are formed, a rapid thermal anneal is applied to the device structure. This has the effect of causing the phosphorous doped and boron doped portions of the trench oxide to be etched at substantially the same rate. After this RTA step, gate oxide is formed over the P and N well. The following formation of polysilicon gates results in a relatively flat gate over transistor structure. This avoids corner leakage which is a problem with trench isolation.