The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2003
Filed:
Mar. 09, 2001
Lars Tilly, Malmö, SE;
Per-Olof Magnus Brandt, Staffanstorp, SE;
Telefonaktiebolaget LM Ericsson (publ), Stockholm, SE;
Abstract
A power transistor includes a plurality of emitter regions and a plurality of base contacts. In order to decrease base resistance, each of the plurality of emitter regions is adjacent to at least four base contacts. The entire transistor includes multiple emitter regions, e.g., greater than or equal to about 1,000 with no upper limit wherein the actual number of emitter regions is dependent on the desired current carrying capacity. The emitter regions are directly connected in parallel to the high current carrying metal layer of the transistor through vias or metal contact studs. The size of the emitter regions should be made as small as the process design rules will allow in order to allow an increase in the perimeter to area ratio of the emitter region which, for a given current, decreases the peak current density.