The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2002
Filed:
Aug. 04, 2000
Applicant:
Inventors:
Leslie Ronald Avery, Flemington, NJ (US);
Christian Cornelius Russ, Princeton, NJ (US);
Assignee:
Sarnoff Corporation, Princeton, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 3/22 ;
U.S. Cl.
CPC ...
H02H 3/22 ;
Abstract
Apparatus for providing electrostatic discharge protection having an nMOS transistor with bias simultaneously applied to the gate and the p-well of the nMOS transistor. A bias circuit is fabricated using a plurality of the Zener diodes. The double bias allows for a relatively high gate voltage to be applied to the nMOS transistor enabling the nMOS transistor to be biased to optimum conditions for bipolar snapback.