The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2002
Filed:
Jun. 30, 2000
Jayendra D. Bhakta, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Embodiments of the invention comprise a new device and technique to realize an improved throughput of a BARC layer furnace deposition device. This improvement is achieved by providing for a higher flow rate of NH during the BARC deposition process. Also, this improvement may be achieved by reducing the temperature gradient of the BARC layer furnace deposition device to approximately 715-750° C. For example, approximately a 1-10% blend of NH in at least one of Argon, Nitrogen, and Helium is utilized. By diluting the NH , a higher flow rate may be utilized in the furnace deposition device, thus allowing for an increased load uniformity of the BARC layer thickness, refractive index, extinction coefficient, and reflectivity characteristics. Also, the NH depletion is reduced and preferably eliminated due to the higher flow rate of the diluted NH . Further, this diluted NH allows for a reduced DCS requirement, thus reducing maintenance requirements, exhaust component contamination and allowing for a lowering of the particulates. The diluted NH is preferably supplied at approximately 200-500 SCCM, and the DCS flow rate is reduced to approximately 100-150 SCCM, at a pressure of approximately 200-350 mTorr.