The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2002
Filed:
Aug. 30, 2001
Applicant:
Inventor:
Koji Usuda, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/136 ; H01L 2/131 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/136 ; H01L 2/131 ; H01L 2/1469 ;
Abstract
There is disclosed a method of manufacturing a semiconductor device, wherein a semiconductor layer having an acute projection containing polycrystalline silicon is formed on a substrate, and then, an insulating layer is formed on the semiconductor layer through an oxidation of the semiconductor layer by excited oxygen species in such a manner that a radius of curvature of the acute projection of the semiconductor layer becomes 20 nm or more.