The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2002
Filed:
Aug. 21, 2000
Peter Zurcher, Phoenix, AZ (US);
Melvy Freeland Miller, III, Tempe, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A semiconductor device and a method of making a semiconductor device. A damascene metal layer ( ) is formed in an insulating dielectric layer ( ), which is in direct electrical communication with a substrate ( ). A layer of a passive element, such as first capacitor electrode layer ( ) is disposed on metal layer ( ) and preferably is offset relative to metal layer ( ) to allow a direct electrical interconnect through a via ( ) to metal layer ( ). In one embodiment a capacitor and a resistor are formed as passive elements in the device. In another embodiment, the passive element includes at least one resistor ( ) and optionally a second resistor ( ). In yet another embodiment, metal layer ( ) is a damascene copper layer.