The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2002

Filed:

Sep. 28, 2000
Applicant:
Inventor:

Satoru Kawai, Yonago, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/184 ; H01L 2/904 ; H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/184 ; H01L 2/904 ; H01L 2/976 ;
Abstract

An object of the present invention is to provide a fabrication method of a liquid crystal display which can reduce the number of masks used in a photolithography process. According to this structure, a gate bus line and a storage capacitor wiring are formed using a first mask, and first metal films are formed on the whole surface including a sidewall insulating film. Then, etching is performed using a second mask until an active semiconductor layer in a TFT forming area on the gate bus line and in an element separation area between pixels exposes. Along with an electroplating of a metal film on the first metal films on a drain electrode, a third metal film thinner than the second metal film is formed on an active semiconductor between the drain electrode and a source electrode and to a pixel electrode except the element separation area between pixels. Finally, using a third metal film as a mask, the third metal film is removed after removing the active semiconductor layer on the element separation area between pixels.


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