The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2002
Filed:
Feb. 08, 2002
Dietmar Gogl, Essex Junction, VT (US);
Hans Viehmann, S. Burlington, VT (US);
Infineon Technologies AG, Munich, DE;
Abstract
An architecture for a magnetoresistive random access memory (MRAM) storage cell with reduced parasitic effects is presented. An additional runs of metal laid in parallel to both the wordline and the bitlines of the MRAM device provide a write wordline and a write bitline are separated from the wordline and the bitline by a dielectric layer and provides electrical isolation of the write currents from the magnetic stacks. The electrical isolation of the write wordline and bitlines reduces the parasitic capacitance, inductance, and resistance seen by the wordline and bitlines during the write operation. The wordline and bitlines remain as in a standard MRAM cross-point array architecture and is dedicated for reading the contents of the MRAM storage cell.