The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2002
Filed:
Jun. 02, 1995
Masanori Miyagi, Chiba, JP;
Haruo Konishi, Chiba, JP;
Kazuaki Kubo, Chiba, JP;
Yoshikazu Kojima, Chiba, JP;
Toru Shimizu, Chiba, JP;
Yutaka Saitoh, Chiba, JP;
Toru Machida, Chiba, JP;
Tetsuya Kaneko, Chiba, JP;
Seiko Instruments INC, , JP;
Abstract
A MISFET is provided with a segmented channel comprising regions in which the channel is inverted by a first gate voltage and regions in which the channel is inverted by a second gate voltage. The MISFET is formed in a semiconductor substrate having a first conductivity type and the first inversion region of the channel has a first impurity concentration determined by the surface concentration of the substrate. The second inversion region of the channel has a second impurity concentration determined by doping an impurity to the region selected by a photolithographic process. The first and second inversion regions may be divided into a plurality of plane shapes and the threshold voltage of the MISFET is set to a desired value in accordance with the plane area ratio of the first and second inversion regions.