The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2002
Filed:
Dec. 13, 2000
Applicant:
Inventors:
John H. Jefferson, Dera Malvern, GB;
Timothy J. Phillips, Dera Malvern, GB;
Assignee:
Qinetiq Limited, London, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/9772 ;
U.S. Cl.
CPC ...
H01L 2/9772 ;
Abstract
A single electron on hole field effect transistor fabricated from a narrow band gap semiconductor. The transistor is such that the valence and conduction bands have sufficiently similar energy levels such that a top region of the valence band at one point ( ), e.g. under a gate electrode ( ), within the current path of the transistor can be forced to be higher than the bottom region of the conduction band at another point within the transistor, allowing Zener tunelling to occur. The transistor is fabricated from semiconductors with band gaps narrow enough to allow this to occur, for instance InSb and InAISb, CdTe and CD Hg Te.