The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2002
Filed:
Jun. 04, 2001
Glenn S. Solomon, Redwood City, CA (US);
David J. Miller, San Francisco, CA (US);
CBL Technologies, Inc., Redwood City, CA (US);
Abstract
A method for the production of crack-free Group III-Nitride layers is disclosed. The method proceeds by growing a crack-free first layer of Group III-Nitride on a starting substrate. A partial to complete loss of coherency is then achieved between a lattice of the first layer and a lattice of the starting substrate. A second layer is grown to form a composite layer that includes the first layer and the second layer such that the first layer is between the second layer and the substrate. The starting substrate may then be completely separated from the composite layer to produce the freestanding crack-free Group III-Nitride layer.