The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2002

Filed:

May. 01, 2000
Applicant:
Inventors:

Masayuki Naya, Kaisei-machi, JP;

Shinji Sakaguchi, Yoshida-cho, JP;

Assignee:

Fuji Photo Film Co., Ltd., Kanagawa-ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/36 ; H01L 2/1027 ;
U.S. Cl.
CPC ...
G03F 7/36 ; H01L 2/1027 ;
Abstract

As shown in FIG. A, a first resist film comprising organic high molecules and a second resist film comprising a photosensitive material are sequentially applied to a substrate by the spin coat method or the spray method for forming a two-layer resist. Then, a mask with which a metallic fine opening pattern is formed on a mask substrate comprising a dielectric, such as glass, is tightly contacted with the two-layer resist. Then, light is projected onto the back of the mask substrate to carry out exposure with near field light which is effused from the opening portions of the mask where no metal is formed. Then, a pattern is formed by processing the second resist layer for development with a developing solution. Thereafter, with the pattern in the second resist layer being used as a mask, the first resist layer is dry-etched with O plasma to form a fine pattern having a high aspect ratio, and with the pattern in the two-layer resist, the substrate is worked by etching, vapor deposition, or the like, before the two-layer resist is peeled off.


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