The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2002

Filed:

May. 04, 2001
Applicant:
Inventors:

Yukihisa Kusuda, Osaka, JP;

Shunsuke Ohtsuka, Osaka, JP;

Seiji Ohno, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 1/750 ; H01L 3/300 ; H01L 2/705 ; H01L 2/176 ; H01L 2/100 ;
U.S. Cl.
CPC ...
G06F 1/750 ; H01L 3/300 ; H01L 2/705 ; H01L 2/176 ; H01L 2/100 ;
Abstract

A method of designing an optimum mask pattern for forming a metal line by an etching process, the metal line also effectively serving as a light-shielding layer, is provided. In this method, assuming that a mask pattern for forming a first metal line on a transparent insulating film has a width of “L ” overlapped with a first control electrode in a direction perpendicular to an array direction of of transfer elements, “L ” is selected so as to satisfy the following relation L >(S+dS)+a, wherein “S” is the distance of side etching of the first metal line, “dS” is the dispersion of the distance of the side etching, and “a” is the misalignment of the mask pattern.


Find Patent Forward Citations

Loading…