The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2002

Filed:

Jul. 14, 2000
Applicant:
Inventor:

Ko Noguchi, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 1/750 ; A61N 5/00 ; H01L 2/904 ; H01L 2/700 ; H01L 2/710 ; H01L 2/7336 ; H01L 2/74763 ; G01R 3/126 ;
U.S. Cl.
CPC ...
G06F 1/750 ; A61N 5/00 ; H01L 2/904 ; H01L 2/700 ; H01L 2/710 ; H01L 2/7336 ; H01L 2/74763 ; G01R 3/126 ;
Abstract

A system for estimating a plasma damage for subsequent layout design of a semiconductor device includes an antenna ratio extraction unit for extracting an antenna ratio from each of existing provisional layout patterns to be exposed to plasma in each of plasma processes. An index calculation unit is connected to the antenna ratio extraction unit for receiving the antenna ratio extracted by the antenna ratio extraction unit and calculating an individual damage index representing a degree of a plasma damage in accordance with the antenna ratio. An index addition unit is connected to the index calculation unit for receiving the individual damage indexes from the index calculation unit and adding the individual damage indexes to estimate a plasma damage.


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