The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2002
Filed:
Oct. 17, 1997
Applicant:
Inventor:
Yong Gwan Kim, Chungcheongbuk-do, KR;
Assignee:
LG Semicon Co., Ltd., Chungcheongbuk-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/335 ;
U.S. Cl.
CPC ...
H04N 5/335 ;
Abstract
A solid-state image sensor in which an interface area between a vertical charge coupled device (VCCD) and a horizontal charge coupled device (HCCD) is formed under the HCCD, thereby maximizing charge-transferring efficiency is disclosed, including a substrate; a well formed in the substrate; a first impurity region formed in the well under the VCCD and the HCCD; and second impurity regions selectively formed in the first impurity region to have a border from the first impurity region under the HCCD, wherein the second impurity regions have a different ion concentration from the first impurity region.