The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2002
Filed:
Jul. 19, 2001
Nobuo Tsukagoshi, Kodama, JP;
Masatoshi Nakasu, Shibukawa, JP;
Atsushi Fujiki, Takasaki, JP;
Kazuaki Ohsawa, Takasaki, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
This semiconductor integrated circuit is constituted by any one of a p-channel MOS transistor and an n-channel MOS transistor, and is connected between the control terminal and the common terminal so as to produce predetermined voltage. The comparing circuit is operated in response to a control voltage applied between the control terminal and the common terminal so as to compare the predetermined reference voltage with the current-detected voltage which is obtained from the current detecting circuit. The gate controlling MOS transistor controls a gate voltage of the power MOS transistor based upon the comparison output of the comparing circuit. Then, all of these structural members are formed on the same semiconductor substrate.