The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2002
Filed:
Jun. 19, 2000
Applicant:
Inventor:
Hirokazu Mouri, Nara, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/906 ;
U.S. Cl.
CPC ...
H01L 2/906 ;
Abstract
A gallium nitride group compound semiconductor photodetector includes a substrate and a multilayer structure provided on the substrate. The multilayer structure includes an n-type gallium nitride group compound semiconductor layer, a p-type gallium nitride group compound semiconductor layer, and a light detecting layer provided between the n-type gallium nitride group compound semiconductor layer and the p-type gallium nitride group compound semiconductor layer. The light detecting layer has a quantum well structure includes a quantum well layer of In Ga N (0<x<1) and a barrier layer of In Ga Al N (0≦y<1, 0≦z≦1, y+z<1).