The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2002
Filed:
Aug. 16, 2000
Kenji Sato, Otsu, JP;
Masahito Sato, Yamanashi-ken, JP;
Other;
Abstract
A carrier selective high resistance film is formed over an entire area between a thick amorphous semiconductor layer and a voltage application electrode, and an electrodeless region extends throughout a circumference of the voltage application electrode. As a result, dark currents are suppressed, without impairing signal response characteristics, by carrier selectivity of the carrier selective high resistance film. Covered by the carrier selective high resistance film, the thick amorphous semiconductor layer maintains an effective surface resistance. The electrodeless region extending circumferentially of the voltage application electrode secures a sufficient surface voltage endurance to suppress creeping discharges due to a bias voltage. Consequently, sufficient detection sensitivity is secured by applying a high bias voltage to the voltage application electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile