The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2002
Filed:
Apr. 17, 2001
Applicant:
Inventors:
Omar Vassalli, Pradalunga, IT;
Simone Alba, Milan, IT;
Assignee:
STMicroelectronics S.r.l., Agrate Brianza, IT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A method enhances selectivity between a film of a light-sensitive material and a layer to be subjected to etching in the course of fabrication processes of an electronic semiconductor device starting from a semiconductor material wafer. The method includes radiating the wafer with an ion beam subsequently to depositing the layer to be etched and defining a circuit pattern on the film of light-sensitive material. An alternative method exposes the wafer to a non-reactive gas medium under plasma rather than radiating the wafer with an ion beam.