The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2002
Filed:
Aug. 30, 2000
Toshiki Shinmura, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The present invention provides a method of forming a titanium polycide gate electrode. The method comprises the step of: forming a gate insulation film a top surface of a semiconductor substrate; forming a polysilicon layer on the gate insulation film; forming a silicon-rich titanium silicide layer on the polysilicon layer by a sputtering process so that a compositional ratio of silicon to titanium of the silicon-rich titanium silicide layer exceeds 2, where preferably the compositional ratio of titanium to silicon is in the range of 1:2.3 to 1:2.5 and more preferably 1:2.4; patterning laminations of the polysilicon layer and the silicon-rich titanium silicide layer to form a titanium polycide gate electrode on the gate insulation film; and subjecting the titanium polycide gate electrode to a rapid thermal oxidation, whereby excess silicon in surface regions of the silicon-rich titanium silicide layer and the polysilicon layers are oxidized, whilst the silicon-rich titanium silicide layer, except for the surface region, remains unchanged in silicon-rich titanium silicide state.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile