The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2002
Filed:
Sep. 10, 1999
Applicant:
Inventors:
Sha Zhu, Kawasaki, JP;
Hideyuki Noshiro, Kawasaki, JP;
Kazuaki Takai, Kawasaki, JP;
Hideaki Yamauchi, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
A semiconductor device having a ferroelectric capacitor is formed by the steps of forming a lower electrode on a substrate, applying a rapid thermal annealing process to the lower electrode, depositing, after the step of rapid thermal annealing process, a ferroelectric film on the lower electrode, crystallizing the ferroelectric film by applying a thermal annealing process to the ferroelectric film, and forming an upper electrode on the ferroelectric insulation film.