The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2002
Filed:
Dec. 23, 1999
Applicant:
Inventors:
Michael J. Manfra, Short Hills, NJ (US);
Loren N. Pfeiffer, Morristown, NJ (US);
Kenneth W. West, Mendham, NJ (US);
Yiu-Huen Wong, Summit, NJ (US);
Assignee:
Agere Systems Inc., Allentown, PA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ; H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/18238 ; H01L 2/976 ;
Abstract
An MOS transistor comprising a substrate, a source, a drain, and a gate, wherein the gate comprises aluminum nitride. Aluminum nitride is epitaxially grown on the silicon substrate at a substrate temperature of about 600° C. and subsequently annealed at a substrate temperature of about 950° C.