The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2002
Filed:
Aug. 06, 2001
Yasuhiro Tomita, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
Each inverter includes any of a P-channel modulation MOS transistor, a normal N-channel MOS transistor, a normal P-channel MOS transistor, and an N-channel modulation MOS transistor. A modulation substrate bias Vb of the P-channel modulation MOS transistor varies with a prescribed amplitude within the range of Vb.Vdd−Vf. A modulation substrate bias Vb′ of the N-channel modulation MOS transistor varies with a prescribed amplitude within the range of Vb′.Vss+Vf′. With a threshold value of the modulation MOS transistor being varied, the transition timing and waveform of a signal are varied, whereby the peak of the EMI radiation becomes gentler. As a result, EMI radiation is reduced while preventing malfunction such as latch-up.