The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2002

Filed:

Dec. 06, 2000
Applicant:
Inventors:

Sifen Luo, Hartsdale, NY (US);

Tirdad Sowlati, Ossining, NY (US);

Chris Joly, North Providence, RI (US);

Kerry Burger, Lincoln, NE (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/04 ; H03G 3/10 ;
U.S. Cl.
CPC ...
H03F 3/04 ; H03G 3/10 ;
Abstract

A power amplifier circuit includes an amplifying transistor and a dc bias circuit for biasing the amplifier transistor to obtain a conduction angle of at least about 180°. The dc bias circuit includes a self-bias boosting circuit for initially decreasing and then increasing the dc bias voltage provided to a control terminal of the amplifying transistor by the dc bias circuit as the input signal provided to the power amplifier increases. The self-bias boosting circuit is extremely simple and compact in design, and permits the power amplifier circuits to operate in Class B or Class AB with improved power output characteristics.


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