The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2002
Filed:
Nov. 08, 2000
Applicant:
Inventors:
Robin W. Cheung, Cupertino, CA (US);
Chiu H. Ting, Saratoga, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/312 ;
U.S. Cl.
CPC ...
H01L 2/312 ;
Abstract
A dual damascene method of fabricating an interconnection level of conductive lines and connecting vias etches a via opening in a first insulating layer. A photoresist layer that the defines the conductive wiring is deposited and patterned on the first insulating layer after the via opening has been created. The via opening and the conductive wire opening in the resist layer are then filled with the conductive material, such as copper. The resist layer may then be removed and a second insulating layer provided over the first insulating layer.