The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2002
Filed:
Apr. 04, 2000
Mark R. Plagens, Richardson, TX (US);
Michael J. Haji-Sheikh, Richardson, TX (US);
Walter T. Matzen, Richardson, TX (US);
Honeywell International Inc., Morristown, NJ (US);
Abstract
A Hall-effect element includes an isolating layer and an active layer of a first electrical conductivity type disposed on the isolating layer, the active layer having a surface. A first set of contacts is disposed in contact with the surface along a first axis, and a second set of contacts is disposed in contact with the surface along a second axis transverse to the first axis. An insulating layer is disposed on the surface. A metal control field plate is disposed on the insulating layer and is coupleable to a voltage source to control the accumulation of charge carriers at the surface of the active layer to vary the resistance of the active layer. Also, a method is provided for reducing null offset in a Hall-effect element. The method includes the steps of providing an isolating layer, disposing an active layer of a first electrical conductivity type on the isolating layer, the active layer having a surface, disposing a first set of contacts on the surface along a first axis, disposing a second set of contacts on the surface along a second axis transverse to the first axis; and disposing an insulating layer on the surface. A voltage is applied across the insulating layer to control the accumulation of charge carriers at the surface to vary the resistance of the active layer.