The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2002
Filed:
Jan. 21, 2000
Deborah J. Riley, Austin, TX (US);
Terri A. Couteau, Rosanky, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Methods of patterning sidewall spacers are provided. In one aspect, a method of fabricating a circuit device includes forming a gate on a substrate and forming a first oxide spacer and a second oxide spacer adjacent to the gate. The width of the gate and the first and second oxide spacers is measured. The widths of the first and second oxide spacers are trimmed if the width of the gate and the first and second oxide spacers exceeds a preselected maximum value by exposing the first and second oxide spacers to a solution of ammonium hydroxide, hydrogen peroxide and water for a preselected like and rinsing with deionized water. Spacer width may be finely tuned to reduce the risk of weak overlap and to improve device characteristics through shorter channels.