The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2002
Filed:
Nov. 27, 2000
Sung Gyu Pyo, Kyungki-Do, KR;
Hyundai Electronics Industries Co., Ltd., Ichon, KR;
Abstract
There is disclosed a method of forming a copper wiring in a semiconductor device. The method establishes a new process technology by which a seed layer is formed by a metal organic chemical vapor deposition method using 1,1,1,5,5,5,5-hexafluoro-2, 4-pentadionato (3,3-dimethyl-1-butene)-copper(I) ((hfac)Cu(DMB)) compound as a copper precursor, by optimally setting deposition process conditions of Cu deposition equipment and filling Cu by either a electroplating method or a electroless-plating method. An alternate method establishes a new process technology by which a first seed layer is formed by physical vapor deposition method, a second seed layer is formed on the first seed layer by a metal organic chemical vapor deposition method using the ((hfac)Cu(DMB)) compound as a copper precursor and Cu is then filled by electroplating method or electroless-plating method. Thus, according to the present invention, the new process technology can not only realize reappearance of the copper deposition process but also obtain a copper thin film having a good film quality.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile