The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2002
Filed:
May. 02, 2000
Applicant:
Inventors:
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
An n-channel device ( ) and a p-channel device ( ) are formed from a single epitaxial silicon layer ( ). During the deposition of the single epitaxial silicon layer ( ), dopants are added to the epitaxial reaction chamber and subsequently changed to define a drain region ( ), a channel region ( ), and a source region ( ). The dopant concentration is modified during the formation of the channel region ( ) to create a doping profile ( ). The doping profile ( ) has a first profile ( ) that is constant and a second profile ( ) that changes.