The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2002
Filed:
Aug. 21, 2000
Applicant:
Inventor:
Toshiyuki Kishi, Tokorozawa, JP;
Assignee:
Citizen Watch Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18234 ;
U.S. Cl.
CPC ...
H01L 2/18234 ;
Abstract
In a semiconductor device comprising an N channel MOS device, and P channel MOS device, or additionally comprising a MONOS device, provided with a gate insulating film and gate electrode formed on a semiconductor substrate or semiconductor layers of a SOI substrate, respectively, the gate insulating film of at least the P channel MOS device is made up of a dual-layer film consisting of a gate oxide film composed of a silicon dioxide film, and a gate silicon nitride film.
Kishi, Toshiyuki. (2002). Semiconductor device and fabricating the same (U.S. Patent No. 6492215). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6492215
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile