The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2002
Filed:
Sep. 07, 2000
Ramachandra Divakaruni, Somers, NY (US);
Russell J. Houghton, Essex Junction, VT (US);
Jack A. Mandelman, Stormville, NY (US);
W. David Pricer, Charlotte, VT (US);
William R. Tonti, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
There is disclosed herein a unique fabrication sequence and the structure of a vertical silicon on insulator (SOI) bipolar transistor integrated into a typical DRAM trench process sequence. A DRAM array utilizing an NFET allows for an integrated bipolar NPN sequence. Similarly, a vertical bipolar PNP device is implemented by changing the array transistor to a PFET. Particularly, a BICMOS device is fabricated in SOI. The bipolar emitter contacts and CMOS diffusion contacts are formed simultaneously of polysilicon plugs. The CMOS diffusion contact is the plug contact from bitline to storage node of a memory cell.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile