The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2002
Filed:
Apr. 19, 2001
Applicant:
Inventor:
Richard Joseph Bojko, Minneapolis, MN (US);
Assignee:
Seagate Technology LLC, Scotts Valley, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C 5/00 ;
U.S. Cl.
CPC ...
G03C 5/00 ;
Abstract
A lithography method combines both high gap resolution and high processing speed. An electron beam sensitive resist is applied to a substrate, followed by a photoresist. The undesired portions of the photoresist are removed through photolithography. An electron beam flood exposure or oxygen ashing is used to remove those portions of the electron beam sensitive resist not protected by the photoresist. An optical flood is used to remove the remaining photoresist. Electron beam lithography is then used to define narrow gaps within the remaining electron beam sensitive resist.