The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2002
Filed:
Jul. 10, 2000
Jagadish Kalyanam, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method and apparatus for depositing a metal and/or metal nitride layer on a substrate by the thermal or plasma enhanced disassociation of an organometallic precursor having the formula of (Cp(R) ) M(CO) , in the presence of a processing gas, such as argon, hydrogen, or ammonia. In one embodiment the metal or metal nitride film is deposited at a pressure of less than about 20 Torr. The deposited metal or metal nitride layer may then be exposed to a plasma to remove contaminants, densify the layer, and reduce layer resistivity. The layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.