The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2002
Filed:
Jul. 21, 2000
Yoji Okazaki, Kaisei-machi, JP;
Takayuki Katoh, Kaisei-machi, JP;
Fuji Photo Film Co., Ltd., Kanagawa-ken, JP;
Abstract
In a laser-diode-pumped laser apparatus, a solid-state laser crystal doped with at least one rare-earth element including at least Pr is pumped with a laser diode, and emits laser light. In the first aspect, the laser diode has an active layer made of one of an InGaN, InGaNAs, and GaNAs materials, and an optical wavelength conversion element converts the solid-state laser light into ultraviolet laser light by wavelength conversion. In the second aspect, the solid-state laser crystal is codoped with Pr and at least one of Er , Ho , Dy , Eu , Sm , Pm , and Nd . In the third aspect, instead of the solid-state laser crystal, an optical fiber codoped with Pr and at least one of Er , Ho , Dy , Eu , Sm , Pm , and Nd is pumped with a GaN-based compound laser diode. In the fourth aspect, an optical fiber codoped with Pr and at least one of Er , Ho , Dy , Eu , Sm , Pm , and Nd amplifies incident light having a wavelength which is identical with a wavelength of fluorescence generated by pumping of the optical fiber with a GaN-based compound laser diode.