The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2002
Filed:
Jan. 05, 2001
Applicant:
Inventor:
Shigeki Tomishima, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 3/100 ;
U.S. Cl.
CPC ...
G01R 3/100 ;
Abstract
A boosting portion switches between an N channel MOS transistor with high drivability and a P channel MOS transistor with low drivability for transmitting a high potential at an internal node to an output node. The N and P channel MOS transistors are respectively operated when boosted potential Vpp is low and high.