The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2002
Filed:
Jun. 28, 1999
Harald Richter, Gärtringen, DE;
Bernd Höfflinger, Sindelfingen, DE;
Uwe Apel, Neckartailfingen, DE;
Ulrich Seger, Magstadt, DE;
Institut fur Mikroelectronik, , DE;
Abstract
The invention relates to a MOS transistor for a photo cell, comprising a semiconductor substrate on which a gate electrode, a drain electrode and a photosensitive source region are configured. An oxide layer is arranged between the gate electrode and the substrate, and in the active region of the MOS transistor this oxide layer is formed as thin oxide film while it is configured as thick oxide film in a passive region. The inventive transistor is distinguished by the provisions that the gate electrode comprises a closed annular section in the active region of the MOS transistor, and that either the drain electrode or the photosensitive source region is arranged within the annular section of the gate electrode so that current will only flow in the active region.