The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2002

Filed:

Jun. 28, 1999
Applicant:
Inventors:

Ju Il Lee, Ichon-shi, KR;

Myung Hwan Cha, Ichon-shi, KR;

Nan Yi Lee, Ichon-shi, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/7146 ; H01L 2/7148 ; H01L 2/9768 ;
U.S. Cl.
CPC ...
H01L 2/7146 ; H01L 2/7148 ; H01L 2/9768 ;
Abstract

The present invention relates to a pinned photodiode for an image sensor and a method for manufacturing the same; and, more particularly, to a pinned photodiode of an image sensor fabricated by CMOS processes and a manufacturing method thereof. The pinned photodiode, according to an embodiment of the present invention, comprises: a semiconductor layer of a first conductivity type; and at least two first doping regions of a second conductivity type alternately formed in the semiconductor layer and connected to each other at edges thereof so that the first doping regions have the same potential, wherein a plurality of PN junctions is formed in the semiconductor layer and the PN junctions improve a capturing capacity of photoelectric charges generated in the photodiode.


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