The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2002
Filed:
Feb. 20, 2001
Alan Richard Sugg, Langhorne, PA (US);
Sensors Unlimited, Princeton, NJ (US);
Abstract
A p-i-n photodiode included a heavily dopes epitaxially grown layer of semiconductor. The photodiode is comprised of heterojunctions of epitaxial material grown on an InP semiconductor substrate ( ). A heavily doped layer ( ) is patterned on top of an InP layer ( ) to define the source of p-type diffusion for the definition of the active region ( ) of the p-n junction. The epitaxially grown source layer ( ) may be comprised of ternary or quaternary III-V semiconductor alloys, typically In Ga As. The principle can be extended to alloy layers that are not lattice-matched to the InP substrate. The p-type dopant is typically Zn, but may also consist of other commonly used p-type dopants such as Be.