The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2002
Filed:
Jun. 29, 2000
Applicant:
Inventor:
Mayumi Morizuka, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/906 ;
U.S. Cl.
CPC ...
H01L 2/906 ;
Abstract
According to this invention, a group III nitride inverted high electron mobility transistor, and a power amplifier using the same are provided. A transistor and power amplifier according to this invention are characterized in that the lattice constant of a bulk of a donor layer is larger than that of an underlayer containing a group III nitride compound semiconductor material, or the donor layer is made of impurity-doped Al Ga N, the underlayer is made of undoped Al Ga N, and x and y satisfy an inequality 0≦y<x≦1.