The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2002
Filed:
Nov. 28, 2000
Woo Sung Jang, Kyunggi-do, KR;
Cheol Ho Lee, Kyunggi-do, KR;
Abstract
The present invention relates to a tungsten chemical vapor deposition method and a method for forming a tungsten plug. The tungsten chemical vapor deposition method of the present invention includes preparing a wafer where a barrier layer is formed. Silane gas is supplied from each of a top of the wafer and a bottom of an edge part of the wafer toward the wafer simultaneously, in order to form a silicon passivation thin film on the top surface and the edge part of the wafer; in order to form a tungsten nucleation on the top surface of the wafer where the passivation thin film is formed. A mixed gas including a tungsten fluoride gas and a silane gas is supplied from the top of the wafer toward the wafer, and at the same time a silane gas is supplied from the bottom of the edge part toward the wafer. A mixed gas including a tungsten fluoride gas and a hydrogen gas is supplied from the top of the wafer toward the wafer, in order to deposit a sufficiently thick tungsten on the surface of the wafer. Therefore, the present invention can prevent a fluoride ion generated during a tungsten deposition process from reacting with the barrier layer at the edge part by passivating not only the top surface of the wafer but also the edge part with the silane gas at the initial step of the tungsten deposition process.