The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2002
Filed:
Sep. 19, 2000
Applicant:
Inventor:
Yoshio Itoh, Tokyo, JP;
Assignee:
Oki Electric Industry Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1306 ;
U.S. Cl.
CPC ...
H01L 2/1306 ;
Abstract
A method of making a semiconductor device includes the steps of etching, with a resist pattern ( ) used as a mask, a contact pattern ( ) in at least one interlayer insulation film ( ) made on a silicon substrate ( ); forming on the contact pattern an insulation film ( ) containing silicon as a main component; and oxidizing by heat treatment the insulation film to provide an oxide film ( ) including a side wall oxide film on an inside wall of the contact pattern.