The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2002
Filed:
Mar. 01, 2000
John L. Freeman, Jr., Mesa, AZ (US);
Raymond J. Balda, Tempe, AZ (US);
Robert A. Pryor, Mesa, AZ (US);
James D. Paulsen, Tempe, AZ (US);
Robert J. Johnsen, Scottsdale, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method of manufacturing a semiconductor component includes providing a composite substrate ( ) with a dielectric portion and a semiconductor portion and growing an epitaxial layer ( ) over the composite substrate. The epitaxial layer has a polycrystalline portion ( ) over the dielectric portion of the composite substrate and also has a monocrystalline portion ( ) over the semiconductor portion of the composite substrate. A first dopant is diffused into the monocrystalline portion of the epitaxial layer to form an emitter region in the monocrystalline portion of the epitaxial layer while a second dopant is simultaneously diffused into the monocrystalline portion of the epitaxial layer to form an enhanced portion of the base region.