The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2002
Filed:
Jan. 28, 2002
Ming-Yu Lin, Kaohsiung, TW;
Hsueh-Wen Wang, Hsin-Chu, TW;
United Electronics Corp., , TW;
Abstract
The present invention provides a method of forming a capacitor in an integrated circuit. The method comprises providing a semiconductor substrate having a conductive layer thereon. The partial conductive layer is removed to form an electrode. A plurality of first dopants are implanted on a surface of the electrode to form a first doped region. Then a plurality of second dopants are implanted into the electrode to form a second doped region below the first doped region. Then the capacitor is formed comprising the electrode. The first doped region and the second region can reduce voltage coefficient as well as increase capacitance of the capacitor.