The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2002
Filed:
Mar. 31, 2000
Applicant:
Inventor:
Yunho Jung, Seoul, KR;
Assignee:
LG. Philips LCD Co., LTD, Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/184 ; H01L 2/1336 ; H01L 2/1331 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/184 ; H01L 2/1336 ; H01L 2/1331 ;
Abstract
The present invention discloses a method for forming a polycrystalline semiconductor layer on a substrate at an atmospheric pressure, including: providing a chamber having an opening portion and a stage therein; forming an amorphous semiconductor layer on the substrate; positioning the amorphous semiconductor layer formed on the substrate on the stage of the chamber; and irradiating five to twelve laser beam shots to every position of a desired portion of the semiconductor layer over the stage through the opening portion of the chamber.