The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2002
Filed:
Feb. 16, 1999
Applicant:
Inventors:
Tomonori Nishimoto, Tsukuba, JP;
Masafumi Sano, Kyoto, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/624 ; H05H 1/02 ; H01L 3/10264 ; H01L 3/104 ;
U.S. Cl.
CPC ...
C23C 1/624 ; H05H 1/02 ; H01L 3/10264 ; H01L 3/104 ;
Abstract
Disclosed herein is a method of forming a microcrystalline silicon film by using a raw gas containing at least a silicon compound by a high-frequency plasma CVD method, wherein the formation of the film is conducted in such a manner that the residence time, &tgr; (ms) of the raw gas in a film deposition chamber, which is defined as &tgr; (ms)=78.9×V×P/M, in which V is a volume (cm ) of the deposition chamber, P is a deposition pressure (Torr), and M is a total flow rate (sccm) of the raw gas, satisfies &tgr;<40. The method permits the formation of a good-quality microcrystalline silicon film at low cost.