The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2002

Filed:

Sep. 01, 1998
Applicant:
Inventors:

Koji Iwamoto, Kanagawa, JP;

Hiroki Nagasaki, Kanagawa, JP;

Shoichiro Matsunaga, Kanagawa, JP;

Shoji Hirata, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/06 ;
U.S. Cl.
CPC ...
H01S 5/06 ;
Abstract

A semiconductor light emitting device having a structure including an active layer between a p-type cladding layer and an n-type cladding layer on a base body comprises at least one of the p-type cladding layer and the n-type cladding layer has a lattice mismatch relative to the base body not smaller than 2.0×10 and not larger than 3.0×10 or not smaller than −1.5×10 and not larger than −2.0×10 . Another semiconductor light emitting device comprises at least one of the p-type cladding layer and the n-type cladding layer and the active layer have a lattice mismatch relative to the base body not smaller than 2.0×10 and not larger than 3.0×10 or not smaller than −1.5×10 and not larger than −2.0×10 .


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