The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2002

Filed:

Sep. 04, 2001
Applicant:
Inventors:

Roland Thewes, Gröbenzell, DE;

Werner Weber, München, DE;

Hugo Van Den Berg, Diethoorn, NL;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 1/100 ;
U.S. Cl.
CPC ...
G11C 1/100 ;
Abstract

A magnetoresistive memory includes magnetoresistive memory cells disposed in a plurality of rows and/or columns. A bit line is connected to first poles of the memory cells of a column. A word line is connected to second poles of the memory cells of a row. A read voltage source is separately connectable to first ends of the word lines. A voltage evaluator has at least one input that is separately connectable to first ends of the bit lines via an evaluation line. A first terminating resistor branches from the evaluation line. An impedance converter has an input connected to the evaluation line and has an output separately connectable to second ends of the bit lines and word lines. The invention also relates to a method of reading magnetoresistive memories.


Find Patent Forward Citations

Thewes, Roland. (2002). Magnetoresistive memory and method for reading a magnetoresistive memory (U.S. Patent No. 6487109). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6487109

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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