The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2002
Filed:
Jul. 03, 2001
Applicant:
Inventor:
Peter Pöchmüller, Colchester, VT (US);
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/100 ;
U.S. Cl.
CPC ...
G11C 1/100 ;
Abstract
A magneto-resistive random access memory (MRAM) configuration is described in which a plurality of memory cell blocks are supplied with operating voltages that differ from one another in each case. This results in that the chip voltage supply of about 2 to 3 V can be better utilized. The memory cell blocks are formed of memory cells disposed at cross-over points of word lines and bit lines.